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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFIC0917/D
The MRFIC Line
900 MHz GaAs Integrated Power Amplifier
This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.5 Watts output power and 43% minimum power added efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve this superior performance, Motorola's planar GaAs MESFET process is employed. The device is packaged in the PFP-16 Power Flat Pack package which gives excellent thermal performance through a solderable backside contact. * Usable Frequency Range 800 to 1000 MHz * Typical Output Power: 34.5 dBm @ 3.6 Volts * 43% Minimum Power Added Efficiency * Low Parasitic, High Thermal Dissipation Package * Order MRFIC0917R2 for Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. * Device Marking = M0917
MRFIC0917
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
CASE 978-02 (PFP-16)
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Supply Voltage, Normal Conditions Supply Voltage under Load Stress RF Input Power Gate Voltage Ambient Operating Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VD1, VD2 VD1, VD2 Pin VSS TA Tstg RJC Value 6 4.5 15 -6 -40 to + 85 - 65 to +150 15 Unit Vdc Vdc dBm Vdc C C C/W
GND VD1 GND VG2 VG1 GND RF IN N/C
9 10 11 12 13 14 15 16
8 7 6 5 4 3 2 1
N/C VD2 GND RF OUT RF OUT RF OUT VSS GND
Pin Connections and Functional Block Diagram
MOTOROLA RF (c) Motorola, Inc. 1998 DEVICE DATA
MRFIC0917 1
RECOMMENDED OPERATING RANGES
Parameter Supply Voltage Gate Voltage RF Frequency Range RF Input Power Symbol VD1, VD2 VSS fRF PRF Value 2.7 to 5.5 -5 to -3 800 to 1000 6 to 13 Unit Vdc Vdc MHz dBm
ELECTRICAL CHARACTERISTICS (VD1, VD2 = 3.6 V, VSS = -4 V, Pin = 12 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
Period, TA = 25C unless otherwise noted. Measured in Circuit Configuration Shown in Figure 1.) Characteristic Frequency Range Output Power Power Added Efficiency Input VSWR Harmonic Output 2nd 3rd Output Power at low voltage (VD1, VD2 = 3.0 V) Output Power, Isolation (VD1, VD2 = 0 V) Noise Power in 100 kHz, 925 to 960 MHz Stability - Spurious Output (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle, VD1, VD2 Adjusted for Specified Pout) Load Mismatch Stress (Pin = 10 to 13 dBm, Pout = 5 to 34.5 dBm, Load VSWR = 10:1 at any Phase Angle, VD1, VD2 Adjusted for Specified Pout) 3 dB VDD Bandwidth (VD1, VD2 = 0 to 4.5 V) Negative Supply Current Min 880 34 43 -- -- -- 32.5 -- -- -- Typ -- 34.5 -- 2:1 -- -- 33 -20 -- -- Max 915 -- -- -- -30 -35 -- -15 -90 -60 dBm dBm dBm dBc Unit MHz dBm % VSWR dBc
No Degradation in Output Power after Returning to Standard Conditions 1 -- -- -- -- 1 MHz mA
VD1
VD2
9
8 7
C9 C10
L2 C1 C2
10 11 12
6 5 4 3
R4
13
T1
T2
C3 RF OUT
R3
14
L1 RF IN
15 2 1
C5
16
C8
C6 R1
C4 VSS
C1, C3, C10 33 pF C2, C6, C9 33 nF C4 4.7 pF C5 10 pF
C8 L1 L2
6.8 pF 5.6 nH 10 Turn MicroSpring, Coilcraft 1606-10 or 18 mm 50 MICROSTRIP
R1, R3 330 R4 1 k T1 2 mm 30 MICROSTRIP T2 3.5 mm 30 MICROSTRIP BOARD MATERIAL FR4
Figure 1. 900 MHz Reference Circuit
MRFIC0917 2
MOTOROLA RF DEVICE DATA
5
D D D D
G S S
4 3 2 1
BATTERY VRAMP
Q1
6 7
C17
STANDBY
8
C13
1 2 3 14 13
R6
R5
C11
12 11 10 9 8
C12
4
C14 C15
9
8 7
C9 C10
L2 C1 C2
CR1
5
10 11 12
6 5 4 3 2 1
C16
6 7
R4
13
T1
T2
C3 RF OUT
U2 RF IN C8
R3
14
L1
15 16
C6
C5
C4
U1 R2
R1
C7
C1, C3, C10 33 pF C2, C6, C9 33 nF C4 4.7 pF C5 10 pF C7 220 nF C8 6.8 pF C11 to C16 1 F C17 0 to 5 nF Depending on control bandwidth
CR1 L1 L2
Q1 R1, R3 R2
MMBD701LT1 5.6 nH 10 Turn MicroSpring, Coilcraft 1606-10 or 18 mm 50 MICROSTRIP MMSF4N01HD 330 100
R4 1 k R5 470 R6 22 T1 2 mm 30 MICROSTRIP T2 3.5 mm 30 MICROSTRIP U1 MRFIC0917 U2 MC33169 (- 4 V Version) BOARD MATERIAL FR4
Figure 2. GSM Application Circuit Configuration with Drain Switch and MC33169 GaAs Power Amplifier Support IC
MOTOROLA RF DEVICE DATA
MRFIC0917 3
TYPICAL CHARACTERISTICS
34 PAE, POWER ADDED EFFICIENCY (%) TA = -40C Pout , OUTPUT POWER (dBm) 33.5 25C 33 32.5 85C 32 31.5 31 880 Pin = 12 dBm VD1 = VD2 = 3.0 V VSS = -4.0 V 885 890 900 905 895 f, FREQUENCY (MHz) 910 915 52 51 50 49 48 47 46 45 44 43 880 885 890 85C Pin = 12 dBm VD1 = VD2 = 3.6 V VSS = -4.0 V 895 900 905 f, FREQUENCY (MHz) 910 915 25C TA = -40C
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency versus Frequency
35.5 PAE, POWER ADDED EFFICIENCY (%) TA = -40C Pout , OUTPUT POWER (dBm) 35 25C 34.5 85C 34 33.5 33 32.5 880 Pin = 12 dBm VD1 = VD2 = 3.6 V VSS = -4.0 V 885 890 895 900 905 f, FREQUENCY (MHz) 910 915
54 52 50 48 46 3.0 V 44 42 40 880 Pin = 12 dBm VSS = -4.0 V TA = 25C 885 890 895 900 905 f, FREQUENCY (MHz) 910 915 3.6 V VD1 = VD2 = 4.2 V
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency versus Frequency
36.4 36 Pout , OUTPUT POWER (dBm) 35.6 35.2 34.8 34.4 34 33.6 880 Pin = 12 dBm VD1 = VD2 = 4.2 V VSS = -4.0 V 885 890 895 900 905 f, FREQUENCY (MHz) 910 915 85C TA = -40C Pout , OUTPUT POWER (dBm)
40 -40C 35 30 25 20 15 10 5 1 1.5 Pin = 12 dBm VSS = -4.0 V f = 900 MHz 0 0.5 2 2.5 3 3.5 4 4.5 5 25C TA = 85C
25C
VD1, VD2, DRAIN VOLTAGE (V)
Figure 7. Output Power versus Frequency
Figure 8. Output Power versus Drain Voltage
MRFIC0917 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
55 PAE, POWER ADDED EFFICIENCY (%) 50 45 40 35 30 25 20 15 10 0 0.5 1 3 2 3.5 1.5 2.5 VD1, VD2, DRAIN VOLTAGE (V) 4 4.5 5 Pin = 12 dBm VSS = -4.0 V f = 900 MHz TA = 25C 85C -40C Pout , OUTPUT POWER (dBm) 36 34 32 30 28 26 24 22 20 -7 -5 -3 VD1 = VD2 = 3.6 V VSS = -4.0 V f = 900 MHz -1 1 3 5 7 Pin, INPUT POWER (dBm) 9 11 13 85C 25C TA = -40C
Figure 9. Power Added Efficiency versus Drain Voltage
Figure 10. Output Power versus Input Power
60 PAE, POWER ADDED EFFICIENCY (%) 50 -40C 40 85C 30 20 10 0 -8
TA = 25C VD1 = VD2 = 3.6 V VSS = -4.0 V f = 900 MHz -6 -4 -2 0 2 4 6 8 Pin, INPUT POWER (dBm) 10 12 14
Figure 11. Power Added Efficiency versus Input Power
f MHz 880 885 890 895 900 905 910 915 R 20.2 20.5 20.8 21.2 21.5 21.9 22.3 22.6
Zin () jX 8.63 8.57 8.5 8.42 8.36 8.3 8.23 8.17 R 2.49 2.48 2.45 2.43 2.42 2.4 2.37 2.36
ZOL* () jX 7.04 6.98 6.91 6.81 6.74 6.64 6.58 6.51
Table 1. Device Impedances Derived from Circuit Characterization
MOTOROLA RF DEVICE DATA
MRFIC0917 5
Table 2. Scattering Parameters (VDD = 3 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 System)
f MHz 500 600 700 800 820 840 860 880 900 920 940 960 980 1000 1100 1200 1300 1400 1500 S11 |S11| 0.738 0.786 0.799 0.681 0.671 0.669 0.668 0.673 0.672 0.672 0.672 0.673 0.682 0.679 0.685 0.705 0.703 0.704 0.646 -86 -83 -113 -115 -116 -117 -118 -119 -120 -122 -123 -124 -126 -127 -134 -143 -152 -161 -174 |S21| 12.71 5.05 11.56 8.44 7.93 7.54 7.30 7.18 7.07 6.90 6.65 6.37 6.10 5.83 4.81 4.67 4.06 3.69 3.19 S21 -82 -102 -79 -113 -115 -117 -119 -121 -123 -127 -130 -133 -136 -138 -145 -152 -165 -175 160 |S12| 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.006 0.006 0.006 0.006 0.007 0.007 0.006 0.007 0.008 0.010 0.011 0.011 S12 147 132 153 138 138 133 130 129 131 130 130 127 130 123 120 121 113 106 86 |S22| 0.891 0.874 0.858 0.885 0.887 0.885 0.888 0.885 0.883 0.883 0.882 0.881 0.88 0.881 0.874 0.868 0.855 0.838 0.826 S22 173 170 173 171 170 170 170 169 169 168 168 168 168 167 166 165 164 163 166
MRFIC0917 6
MOTOROLA RF DEVICE DATA
Table 3. Scattering Parameters (VDD = 3.6 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 System)
f MHz 500 600 700 800 820 840 860 880 900 920 940 960 980 1000 1100 1200 1300 1400 1500 S11 |S11| 0.737 0.792 0.799 0.687 0.681 0.680 0.678 0.680 0.681 0.680 0.681 0.681 0.688 0.684 0.690 0.707 0.701 0.704 0.643 -85 -83 -112 -115 -116 -117 -118 -119 -120 -122 -123 -125 -126 -128 -135 -143 -153 -162 -174 |S21| 14.12 5.47 12.69 9.13 8.56 8.12 7.83 7.69 7.53 7.36 7.09 6.77 6.47 6.18 5.08 4.90 4.24 3.83 3.26 S21 -84 -103 -80 -115 -117 -119 -121 -123 -125 -129 -132 -135 -137 -139 -147 -153 -167 -176 160 |S12| 0.002 0.002 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006 0.006 0.006 0.006 0.007 0.007 0.009 0.010 0.010 S12 135 130 157 131 131 132 131 129 133 127 130 121 123 123 116 123 112 107 84 |S22| 0.887 0.866 0.853 0.881 0.882 0.882 0.883 0.882 0.882 0.879 0.878 0.878 0.878 0.876 0.870 0.862 0.852 0.833 0.828 S22 174 170 174 171 171 170 170 170 169 169 169 168 168 168 166 165 164 164 167
MOTOROLA RF DEVICE DATA
MRFIC0917 7
Table 4. Scattering Parameters (VDD = 4.2 V, VSS, VG1, VG2 Set for IDQ1= 150 mA and IDQ2 = 750 mA, 50 System)
f MHz 500 600 700 800 820 840 860 880 900 920 940 960 980 1000 1100 1200 1300 1400 1500 S11 |S11| 0.740 0.798 0.802 0.694 0.688 0.684 0.688 0.684 0.686 0.685 0.682 0.687 0.694 0.686 0.692 0.704 0.698 0.695 0.638 -85 -84 -112 -116 -116 -117 -119 -120 -121 -123 -124 -126 -127 -129 -137 -145 -154 -163 -175 |S21| 15.59 5.71 13.82 9.82 9.20 8.70 8.37 8.20 8.03 7.82 7.53 7.18 6.84 6.53 5.34 5.12 4.41 3.94 3.34 S21 -86 -103 -81 -116 -119 -121 -123 -125 -127 -131 -134 -137 -139 -141 -149 -155 -168 -178 159 |S12| 0.002 0.002 0.004 0.005 0.005 0.004 0.005 0.005 0.005 0.006 0.005 0.006 0.006 0.006 0.006 0.007 0.009 0.010 0.009 S12 139 135 154 137 132 137 133 129 127 130 127 126 124 123 116 122 113 104 84 |S22| 0.880 0.859 0.851 0.879 0.883 0.877 0.879 0.879 0.879 0.879 0.875 0.874 0.875 0.873 0.866 0.861 0.847 0.835 0.828 S22 174 171 174 171 171 171 170 170 169 169 169 169 168 168 167 165 165 164 167
MRFIC0917 8
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
Design Philosophy The MRFIC0917 is a two-stage Integrated Power Amplifier designed for use in cellular phones, especially for those used in GSM Class IV, 3.6 V operation. Due to the fact that the input, output and some of the interstage matching is accomplished off chip, the device can be tuned to operate anywhere within the 800 to 1000 MHz frequency range. This capability makes the MRFIC0917 suitable for portable cellular applications such as: S 3.6 V 900 MHz DAMPS S 3.6 V 900 MHz PDC RF Circuit Considerations The MRFIC0917 can be tuned by changing the values and/ or positions of the appropriate external components. Refer to Figure 2, a typical GSM Class IV applications circuit. The input match is a shunt-C, series-L, low-pass structure and can be retuned as desired with the only limitation being the on-chip 12 pF blocking capacitor. For saturated applications such as GSM and analog cellular, the input match should be optimized at the rated RF input power. Interstage matching can be optimized by changing the value and/or position of the decoupling capacitor on the VD1 supply line. Moving the capacitor closer to the device or reducing the value increases the frequency of resonance with the inductance of the device's wirebonds and leadframe pin. Output matching is accomplished with a two-stage low-pass network as a compromise between bandwidth and harmonic rejection. Implementation is through chip capacitors mounted along a 30 or 50 microstrip transmission line. Values and positions are chosen to present a 2 loadline to the device while conjugating the device output parasitics. The network must also properly terminate the second and third harmonics to optimize efficiency and reduce harmonic output. When low-Q commercial chip capacitors are used for the shunt capacitors, loss can be reduced by mounting two capacitors in parallel to achieve the total value needed. Loss in circuit traces must also be considered. The output transmission line and the bias supply lines should be at least 0.6 mm in width to accommodate the peak circulating currents which can be as high as 2 amperes. The bias supply line which supplies the output should include an RF choke of at least 8 nH, surface mount solenoid inductors or equivalent length of microstrip lines. Discrete inductors will usually give better efficiency and conserve board space. The DC blocking capacitor required at the output of the device is best mounted at the 50 impedance point in the circuit where the RF current is at a minimum and the capacitor loss will have less effect. Power Control Using the MC33169 The MC33169 is a dedicated GaAs power amplifier support IC which provides the -4 V required for VSS, an N-MOS drain switch interface and driver and power supply sequencing. The MC33169 can be used for power control in applications where the amplifier is operated in saturation since the output power in non-linear operation is proportional to VD2. This provides a very linear and repeatable power control transfer function. This technique can be used open-loop to achieve 20-25 dB dynamic range over process and temperature variation. With careful design and selection of calibration points, this technique can be used for GSM phase II control where 29 dB dynamic range is required, eliminating the need for the complexity and cost of closed-loop control. The transmit waveform ramping function required for systems such as GSM can be implemented with a simple Sallen and Key filter on the MC33169 control loop. The amplifier is then ramped on as the VRAMP pin is taken from 0 V to 3 V. To implement the different power steps required for GSM, the VRAMP pin is ramped between 0 V and the appropriate voltage between 0 V and 3 V for the desired output power. For closed-loop configurations using the MC33169, MMSF4N01HD N-MOS switch and the MRFIC0917 provide a typical 1 MHz 3 dB loop bandwidth. The STANDBY pin must be enabled (3 V) at least 800 s before the VRAMP pin goes high and disabled (0 V) at least 20 s before the VRAMP pin goes low. This STANDBY function allows for the enabling of the MC33169 one burst before the active burst thus reducing power consumption. Biasing Considerations Gate bias is supplied to each stage separately through resistive division of the VSS voltage. The top of each divider is brought out through pins 12 and 13 (VG2 and VG1 respectively) allowing gate biasing through use of external resistors or positive voltages. This allows setting the quiescent current of each stage separately. For applications where the amplifier is operated close to saturation, such as GSM and analog cellular, the gate bias can be set with resistors. Variations in process and temperature will not affect amplifier performance significantly in these applications. The values shown in the Figure 1 will set quiescent currents of 100 to 200 mA for the first stage and 600 to 1200 mA for the second stage. For linear modes of operation, the quiescent current must be more carefully controlled. For these applications, the VG pins can be referenced to some tunable voltage which is set at the time of radio manufacturing. Less than 1.0 mA is required in the divider network so a DAC can be used as the voltage source. Typical settings for 3.6 V linear operation are 150 mA 5% for the first stage, and 750 mA 5% for the second stage. Conclusion The MRFIC0917 offers the flexibility in matching circuitry and gate biasing required for portable cellular applications. Together with the MC33169 support IC, the device offers an efficient system solution for TDMA applications such as GSM where saturated amplifier operation is used. Evaluation Boards Evaluation boards are available for RF Monolithic Integrated Circuits. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office.
MOTOROLA RF DEVICE DATA
MRFIC0917 9
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.350 0.025 0.152 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
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BOTTOM VIEW
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S DATUM PLANE
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SEATING PLANE
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GAUGE PLANE
CASE 978-02 ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
MRFIC0917 10
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MRFIC0917/D MOTOROLA RF DEVICE DATA

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